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Product Description
The SGA-7489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
Gain, Return Loss, and Isolation vs. Frequency
30 25 20 Gain (dB) 15 10 5
Isolation Output Return Loss
SGA-7489 SGA-7489Z
Pb
RoHS Compliant & Green Package
DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block
Product Features * Now available in Lead Free, RoHS
Compliant, & Green Packaging
* DC-3000 MHz Operation
0
VD=5.0V, ID=115mA (Typ), TLEAD=+25C
* Very High IF Output IP3: 39dBm at 100MHz * High Output IP3: +35.5 dBm typ. at 850 MHz * Low Noise Figure: 3.3 dB typ. at 1950 MHz
Return Loss & Isolation (dB)
Gain
-5
Input Return Loss
-10
-15
Applications * Oscillator Amplifiers
* PA for Low / Medium Power Applications * IF/ RF Buffer Amplifier * Drivers for CATV Amplifiers * LO Driver Amplifier
Freq. (MHz) 850 1950 100 850 1950 1950 * 850 1950 Min. 18.5 Typ. 22.4 20.0 39.0 35.5 33.0 36.0 * 21.5 18.5 3000 1950 1950 1950 1950 4.7 103 10.3 9.0 15.0 11.0 23.0 3.3 5.0 115 82 4.3 5.3 127
o
-20
-25
0
0 500 1000 1500 2000 2500
-30 3000
Frequency (MHz)
Symbol P1dB
Parameter Output Pow er at 1dB Compression
Max.
Units dBm
OIP3
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
31.0 20.0 17.0
dBm
S21 Bandw idth IRL ORL S12 NF VD ID RTH, j-l
Small Signal Gain Determined by Return Loss (>9dB) Input Return Loss Output Return Loss Reverse Isolation Noise Figure, ZS = 50 Ohms Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead)
23.0 20.0
dB MHz dB dB dB dB V mA C/W
Test Conditions:
VS = 8 V ID = 115 mA Typ. Bias Resistance = 26 Ohms
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have since shown that an operating current of 115mA results in optimal RF performance over temperature. Continued operation at 130mA is reliable, however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101801 Rev D
SGA-7489 DC-3000 MHz SiGe Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Frequency Frequency (MHz) Frequency (MHz)(MHz)
Symbol Parameter Unit 100 500 850 1950 2400
G OIP3 P1dB IRL ORL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
dB dBm dBm dB dB dB dB
23.0 39.0 22.8 13.5 19.5 26.0 2.7
22.5 36.5 22.6 14.5 17.0 25.5 2.7
21.5 35.5 22.4 15.5 14.5 25.0 2.8
18.5 33.0 * 20.0 15.0 11.0 23.0 3.3
17.0 32.2 19.0 13.5 10.5 22.0
Test Conditions:
VS = 8 V ID = 115 mA Typ. Bias Resistance = 26 Ohms
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms
* NOTE: An OIP3 of +36dBm at 1950 MHz is achieved using the tuned circuit shown on page 5. Absolute Maximum Ratings
Noise Figure vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25C
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power : ZL= 50 Ohms Max. RF Input Power : Load VSWR=10:1* Max. Junction Temp. (TJ)
Absolute Limit
170 mA
5.0 4.5 4.0
7V +16 dBm +2 dBm
+150C -40C to +85C +150C
NF (dB)
3.5 3.0 2.5 2.0 1.5 1.0 0 500 1000 1500 2000
Operating Temp. Range (TL)
Max. Storage Temp.
-40C +25C +85C
TLEAD
O p e r a t io n o f t his d e vic e b e y o nd a ny o ne o f t he s e limit s ma y c a us e permanent damage. For reliable continous operation, the device voltage must not exceed 5.3V and the device current must not exceed 143mA. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l *Note: Take into account out of band load VSWR presented by devices such as SAW filters to determine maximum RF input power. Reflected harmonic levels in saturation are significant.
Frequency (MHz)
OIP3 vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25C
P1dB vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25C
40.0 38.0 36.0
26.0 24.0 22.0
OIP3 (dBm)
34.0 32.0 30.0 28.0 26.0 0 500 1000 1500
P1dB (dBm)
-40C +25C +85C +25C Tuned Circuit
20.0 18.0 16.0
-40C
TLEAD
14.0 12.0
TLEAD
0 500 1000 1500 2000
+25C +85C
2000
2500
2500
Frequency (MHz)
Frequency (MHz)
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101801 Rev D
SGA-7489 DC-3000 MHz SiGe Amplifier
Preliminary
Typical RF Performance Over Temperature
(Bias: VS= 8.0 V, Bias Resistance=26 Ohms, ID= 115 mA )
|S | vs. Frequency
21
|S | vs. Frequency
11
30
0 -5
24 -10 |S21| (dB) 18 |S11| (dB)
+25C -40C +85C
-15 -20
12
TL
6 0 500 1000 1500 2000 Frequency (MHz)
-25 -30
TL
0 500 1000 1500 2000 Frequency (MHz)
+25C -40C +85C
2500
3000
2500
3000
|S | vs. Frequency
12
|S | vs. Frequency
22
-10
0 -5
-15 -10 |S12| (dB) |S22| (dB) -20 -15 -20 -25
TL
-30 0 500 1000 1500 2000 Frequency (MHz)
+25C -40C +85C
-25 -30 3000 0 500
TL
1000 1500 2000 Frequency (MHz)
+25C -40C +85C
2500
2500
3000
NOTE: Full S-parameter data available at www.sirenza.com
ID vs. VD Variation over Temperature
VSUPPLY = 8 V, Bias Resistance = 26 Ohms 150 140 130 120
+25C
Plot of VD vs. Temp. @ ID=115 mA
5.3 5.2
VD (Volts)
+85C
5.1 5.0 4.9
ID (mA)
110 100 90 80 4.70
-40C
4.8 4.7 -40
4.80
4.90
5.00 VD (Volts)
5.10
5.20
5.30
-15
10
35
60
85
Temperature (C)
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101801 Rev D
SGA-7489 DC-3000 MHz SiGe Amplifier
Preliminary
Basic Application Circuit
R BIAS
1 uF 1000 pF
VS
ID CD R LDC LC
Application Circuit Element Values
Frequency (Mhz) Reference Designator 100 500 850 1950 2400
Bias Inductor
CB CD LC
1000 pF 100 pF 470 nH
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
RF in CB
1 SGA-7489 3 2
4
VD
RF out CB
Required Bias Resistance for ID=115mA Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID Supply Voltage(VS) Bias Resistance 7V 17 8V 26 9V 35 12 V 61
VS
RBIAS
Gnd.
1 uF 1000 pF
Bias resistor improves current stability over temperature.
Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
A74
LC
CD CB
CB
Pin # 1
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance.
Part Identification Marking 4 4
2, 4 GND
A74
2
A74Z
3
3
3
1
2
3
1
2
3
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
1
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
1
2
Part Number Ordering Information
Part Number
Reel Size
Devices/Reel
See Application Note AN-075 for Package Outline Drawing
SGA-7489 SGA-7489Z
13" 13"
3000 3000
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-101801 Rev D

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